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2N4123

NPN General Purpose Amplifier

2N4123

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 100 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 30 V

CBO

Collector-Base Voltage 40 V

EBO

Emitter-Base Voltage 5.0 V

Collector Current - Continuous 200 mA

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

°C

Symbol Characteristic Max Units

2N4123

Total Device Dissipation

Derate above 25°C

625

5.0

mW/°C

Thermal Resistance, Junction to Case 83.3 °C/W

Thermal Resistance, Junction to Ambient 200

°C/W

TO-92

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 2001 Fairchild Semiconductor Corporation

2N4123, Rev A

1 2 3 4 5 6 7

Inhaltsverzeichnis

Seite 1 - NPN General Purpose Amplifier

2N4123NPN General Purpose Amplifier2N4123This device is designed for use as general purpose amplifiersand switches requiring collector currents to 100

Seite 2

2N4123NPN General Purpose Amplifier(continued)Electrical Characteristics TA = 25°C unless otherwise notedOFF CHARACTERISTICSSymbol Parameter Test

Seite 3 - Typical Characteristics

2N4123Typical CharacteristicsBase-Emitter ON Voltage vsCollector Current0.1 1 10 1000.20.40.60.81I - COLLECTOR CURRENT (mA)V - BASE-EMITTER

Seite 4

Power Dissipation vsAmbient Temperature0 25 50 75 100 125 15000.250.50.751TEMPERATURE ( C)P - POWER DISSIPATION (W)DoSOT-223SOT-23TO-92Typical Cha

Seite 5

2N4123NPN General Purpose Amplifier(continued)Typical Characteristics (continued)Storage Time vs Collector Current1 10 100510100500I - COLLECTOR

Seite 6 - Test Circuits

Test Circuits10 KΩΩΩΩΩ3.0 V275 ΩΩΩΩΩt1C1 <<<<< 4.0 pFDuty Cycle ===== 2%Duty Cycle ===== 2%<<<<< 1.0 ns - 0.5 V 3

Seite 7

TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an ex

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